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| S amHop Microelectronics C orp. S T S 3622 J an, 03 2006 Dual N-Channel Enhancement Mode Field Effect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) Max ID 3A R DS (ON) S uper high dense cell design for low R DS (ON). 65 @ V G S = 10V 90 @ V G S =4.5V R ugged and reliable. S OT-26 package. D1 D2 S OT26 Top View G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 30 20 3 12 1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W 1 S T S 3622 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID = 3A VGS = 4.5V, ID = 2A VDS = 5V, VGS = 4.5V VDS = 5V, ID =3A Min Typ C Max Unit 30 1 100 1 1.5 45 70 10 6 310 73 38 3 65 90 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 15V, ID = 1A, VGS = 10V, R L = 15 ohm R GE N = 6 ohm VDS =15V, ID = 3A, VGS =10V 7.2 4.5 12 2.5 6.2 0.9 1.8 ns ns ns ns nC nC nC 2 S T S 3622 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.25A Min Typ Max Unit 0.82 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 V G S =10V 10 V G S =4V 8 ID, D rain C urrent(A) 8 ID, Drain C urrent (A) V G S =4.5V 6 4 2 0 6 T j=125 C 4 25 C 2 -55 C 0 0.0 0.8 1.6 2.4 3.2 4.0 4.8 V G S =3V 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 120 100 1.5 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 1.4 1.3 1.2 1.1 1.0 0 R DS (on) (m W) V G S =10V ID=3A 80 60 V G S =4.5V V G S =10V 40 20 0 V G S =4.5V ID=2A 0 2 4 6 8 10 0 25 50 75 100 ID, Drain C urrent (A) 150 125 T j( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Temperature 3 S T S 3622 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 F igure 5. G ate T hres hold V ariation with T emperature 120 T j, J unction T emperature ( C ) F igure 6. B reakdown V oltage V ariation with T emperature 20 125 C ID=3A 100 80 125 C 60 40 20 0 75 C 25 C Is , S ource-drain current (A) 10 R DS (on) (m W) 75 C 25 C 0 2 4 6 8 10 1 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate-S ource Voltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage V S D, B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 3622 500 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Qg, T otal G ate C harge (nC ) C , C apacitance (pF ) 400 300 200 100 C rs s 0 0 5 10 15 20 25 30 C os s C is s VDS =15V ID=3A V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance F igure 10. G ate C harge 100 S witching T ime (ns ) 50 10 RD S Tr T D(o ff) ID, Drain C urrent (A) ( ) ON L im it 10 10 0m ms T D (o n) 10 Tf 11 DC 1s s 1 1 6 10 V DS =15V ,I D=1A V G S =10V 0.1 0.03 VGS =10V S ingle P ulse T c=25 C 0.1 1 10 20 50 60 100 300 600 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T S 3622 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 1. 2. 3. 4. t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 S T S 3622 P AC K AG E OUT LINE DIME NS IONS S OT 26 7 S T S 3622 SOT26 Tape and Reel Data SOT26 Carrier Tape SOT26 Reel 8 |
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